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2SD2206
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD2206
Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
* *
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Absolute Maximum Ratings (Ta = 25C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 100 100 8 2 3 0.5 900 150 -55 to 150 Unit V V V A A mW C C
JEDEC JEITA TOSHIBA
TO-92MOD 2-5J1A
Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
COLLECTOR
BASE 4 k 800 EMITTER
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2SD2206
Electrical Characteristics (Ta = 25C)
Characteristics Collector cut-off current Emitter cut-off current Collector- emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) fT Cob ton IB1 Test Condition VCB = 80 V, IE = 0 VEB = 8 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 1 A IC = 1 A, IB = 1 mA IC = 1 A, IB = 1 mA VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0, f = 1 MHz Output 30 Min 100 2000 Typ. 100 20 0.4 Max 10 4 1.5 2.0 V V MHz pF Unit A mA V
20 s
Input IB2
IB1 IB2
Switching time
Storage time
tstg
4.0
s
VCC = 30 V Fall time tf IB1 = -IB2 = 1 mA, duty cycle 1% 0.6
Marking
D2206
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SD2206
IC - VCE
4 10 k
hFE - IC
(A)
3
3 mA 2 mA
1 mA
700 A 500 A 400 A
3k Ta = 100C
25
DC current gain hFE
Collector current IC
1k -55 300
2
300 A IB = 200 A
1 Common emitter Ta = 25C 0 0 1 2 3 4 5
100
30
Common emitter VCE = 2 V
Collector-emitter voltage
VCE (V)
10 10 m
30 m
100 m
300 m
1
3
10
Collector current IC
(A)
Collector-emitter saturation voltage VCE (sat) (V)
VCE (sat) - IC
3 Common emitter IC/IB = 1000 3
IC - VBE
Common emitter
(A)
VCE = 2 V 2
1
25 100
Collector current IC
Ta = -55C
0.5 0.3 0.5 1 3 5
Ta = 100C 1 -55
Collector current IC
(A)
25
0 0
0.8
1.6
2.4
3.2
4.0
Base-emitter voltage
VBE (V)
VBE (sat) - IC
10
Safe Operating Area
5 3 IC max (pulsed)*
Base-emitter saturation voltage VBE (sat) (V)
Common emitter
(A)
IC/IB = 1000 5 3 Ta = -55C 25 1 100
Collector current IC
1 0.5 0.3 *: Single nonrepetitive pulse Ta = 25C 10 ms*
1 ms* 100 s*
0.1
0.05 Curves must be derated linearly with increase in temperature. 0.03 0.3 0.5 1 3 5 10
VCEO max 30 50 100 300
0.5 100 m
300 m 500 m
1
3
5
Collector current IC
(A)
Collector-emitter voltage VCE (V)
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2SD2206
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
4
2006-11-21

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